ARC Consortium: William & Mary
Employee Information - Surface Modification (L207)
Plasma Sourse Immersion[ion] Implantation of Electron Source Structures
Effective technique to modify the electrical properties of various materials
- Uniformly modify large, 3-D, samples
- Relatively low process temperature
PSII System has two modes of operation
- Purely inductive mode
- Pure nitrogen-implantation into substrate
- Inductive/capacitive mode
- PVD sputtering of quartz window gives rise to the co-deposition of silicon dioxide during ion implantation into substrate.
Specifications:
- Cylindrical chamber
- 23" ID, 18" high
- Pumps
- Seiko Seiki STPH-1000C turbo mag-lev pump
- 17cfm Edwards ESDP 30A dry scroll pump
- 17cfm Alcatel ACP 28G dry pump, for corrosive gases
- 2 kW Rf plasma source
- Inductively-coupled using a planar coil antenna
- Pulse Forming Network
- Max capacity - 100 kV, 30A, 200 Hz rep. rate
System has been improved significantly to improve performance
- To reduce dust/arcs - Cleanroom enclosure was installed
- More effective Rf tuning - New matching network, Rf cable, Iris valve
- Corrosive gas capability - New dry vacuum pump system
- Pressure Accuracy - New Stabil-Ion gauge system
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